1 Composite Transistors PT — Ta 500 60 Ta=25˚C IB=160µA XN2501 IC — VCE 1200 VCE=10V Ta=25˚C 1000 IB — VBE Total power dissipation PT (mW) Collector current IC (mA).

Silicon NPN epitaxial planer transistor

XN02531

XN01110

XN01112

XN01114

XN01119

XN01210

XN01211

XN01212

XN01215

XN0121E

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